A 260–300 GHz Three-Stage Power Amplifier Using Pre-Embedding Network in 130-nm SiGe

A three-stage power amplifier operating between 260 and 300 GHz in 130-nm SiGe is designed. The gain is boosted by a linear lossless reciprocal pre-embedding network, and the admittance matrix expression of the network is derived.

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Publication Details

Published
2024-11-02
DOI
https://doi.org/10.1109/acp/ipoc63121.2024.10809561
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.00

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article

A 260–300 GHz Three-Stage Power Amplifier Using Pre-Embedding Network in 130-nm SiGe

Jianguo Yu, Yibo Huang, Yun Wang, Xiaorui Liu
Radio Frequency Integrated Circuit Design
article

A 260–300 GHz Three-Stage Power Amplifier Using Pre-Embedding Network in 130-nm SiGe

Jianguo Yu, Yibo Huang, Yun Wang, Xiaorui Liu
article en

Abstract

A three-stage power amplifier operating between 260 and 300 GHz in 130-nm SiGe is designed. The gain is boosted by a linear lossless reciprocal pre-embedding network, and the admittance matrix expression of the network is derived.

Beijing University of Posts and Telecommunications (CN)
National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 77%
Radio Frequency Integrated Circuit Design
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