A High-Power and Low-Timing Jitter Mode-Locked Semiconductor Laser Based on a Distributed Bragg Reflector
We demonstrated a high-power and low-timing jitter monolithically integrated DBR AlGaInAs/InP mode-locked semiconductor laser with a repetition frequency of 25 GHz. The optical output is 74 mW and timing jitter is 42 fs (integrated from 1 kHz to 10 MHz).
Authors
- Defan Sun (ORCID: https://orcid.org/0000-0003-4501-2569)
- Dan Lu (ORCID: https://orcid.org/0000-0001-7811-8250)
- Yueying Niu
- Fei Guo (ORCID: https://orcid.org/0000-0003-3266-5034)
- Ruikang Zhang (ORCID: https://orcid.org/0009-0000-5551-2431)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
Publication Details
- Published
- 2024-11-02
- DOI
- https://doi.org/10.1109/acp/ipoc63121.2024.10809516
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China