Design of Uni-Traveling-Carrier Photodetector (UTC-PD) with Low-Energy Consumption

In order to realize high-speed and high-power performance with a thin absorber layer thickness and low incident optical power, this paper provides the design simulation of a GaAsSb/InP back-incident high-speed and high-power Uni-Traveling-Carrier photodetector based on Silvaco TCAD. By replacing In<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.57</inf>Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.43</inf>As in the absorber layer with GaAs<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.51</inf>Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.49</inf>, which matches the InP lattice, the responsivity of the GaAsSb absorber layer with a thickness of 300 nm reaches 0.593 A/W, which is 80% higher than that of the same-thickness InGaAs, and the optical power required to output an 80mA photocurrent is 134.9 mW, which is half of the optical power of the InGaAs material. This work provides valuable insights and guidance for designing low energy consumption photodetector with high speed and high power performances.