Study on the Mechanism of High Power Microwave Radiation Effect of GaN LNA

In this paper, a high-power microwave resonant cavity is designed and used to build a high-power microwave radiation experimental system, and the high-power microwave radiation interference effect of GaN low-noise amplifier is studied. Unlike lots of previous papers whose research focuses on the high-power microwave injection damage effects of RF front-end devices, this paper proposes a simple high-power microwave radiation testing system, which can generate a high-power microwave radiation field of 100kV/m under continuous wave and pulse working conditions. The gain of GaN LNA decreases with the increase of high-power microwave radiation field strength, mainly due to the vertical high-power microwave radiation equal to the injection power to the input port of LNA, which causes saturation of the LNA, and reduces its linearity and amplification ability for weak signals. This experimental system greatly reduces the high cost, difficulty, and safety requirements of traditional high-power microwave effect systems. It has certain practical value for conducting high-power microwave radiation experiments on digital circuits such as MCU and FPGA, as well as analog circuit components such as limiters and amplifiers.