Effect of Hydrogen Doping on the Photoelectronic Properties of Indium Oxide Thin Films
Hydrogen doping and annealing in indium oxide can improve the conductivity, mobility and lower the extinction coefficient, enhancing suitability for high-speed photoelectronic devices. The effects on photoelectronic properties of indium oxide are investigated.
Authors
- H. Y. Fu (ORCID: https://orcid.org/0000-0002-4276-0011)
- Haiyan Xiao (ORCID: https://orcid.org/0000-0003-2387-8804)
- Chenxingyu Huang (ORCID: https://orcid.org/0000-0003-0095-6523)
- Qian Li (ORCID: https://orcid.org/0000-0002-2396-7041)
- Jialiang Li (ORCID: https://orcid.org/0000-0002-9704-4135)
- Hong Jin (ORCID: https://orcid.org/0000-0002-9267-4146)
- Lei Lü (ORCID: https://orcid.org/0000-0001-5275-2181)
Institutions
- Peking University (CN)
- Tsinghua–Berkeley Shenzhen Institute (CN)
- Tsinghua University (CN)
Publication Details
- Published
- 2024-11-02
- DOI
- https://doi.org/10.1109/acp/ipoc63121.2024.10809651
- Primary Topic
- ZnO doping and properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Science, Technology and Innovation Commission of Shenzhen Municipality
- Shenzhen International Cooperation Research Project