X-Band GaN Internal Matching Power Amplifier

In this paper, a 9–11 GHz power amplifier based on high pressure gallium nitride (GaN) high electron mobility transistor (HEMT) is designed. The matching network uses a modified version of the power separator structure, which enables a wider bandwidth at the same size. This power amplifier uses a chip with a gate size of 0.25um, which has a greater gain compared with a chip with a gate size of 0.45um. The simulation results show that in the 9–11 GHz frequency band, the power amplifier performs the saturation output power is more than 54 dBm, the gain is greater than 9 dB, the power additional efficiency is higher than 45%, and the input echo loss S11 is less than-10dB. The total size of this power amplifier is 26.4mm×17.4mm × 4.6mm, with miniaturization and high integration characteristics.