A High Voltage Driver Amplifier with Wide Output Swing, High Linearity, High Output Accuracy and Compact Size

This paper presents a high voltage driver amplifier with compact die size and high output accuracy. The amplifier utilizes two stage fully differential architecture to achieve high voltage gain, ensuring that the relative error of the output voltage is less than <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$5\%$</tex>. It operates with three power supplies: 3.3V, <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\pm 17\mathrm{V}$</tex>, and adopts various simulating for power-up protection to enhance practical reliability. To optimize chip area, a combination of high voltage and low voltage MOS transistors is employed. The circuit is fabricated using the 180nm BCD process, with a chip area of 0.98mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The testing results show that when driving a load of 13pF in parallel with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$143.4\mathrm{k}\Omega$</tex>, it can achieve output voltage swing of greater than <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\pm 13.2\mathrm{V}$</tex>, with output relative error less than 5%.