A 5.8-GHz High-Efficiency Inverse Class-F Rectifier Circuit with GaN Schottky Diode
In this paper, we proposed a high-efficiency 5.8GHz inverse class-F rectifier for wireless power transmission (WPT). The rectifier is based on gallium nitride Schottky barrier diodes (GaN SBD) and consists of an input matching network, a harmonic control network and a DC-pass filter. The harmonic control network uses three microstrip lines to suppress the second and third harmonics, and shapes the voltage and current waveforms at both ends of the diode to reduce diode losses. The DC-pass filter at the output suppresses the fundamental, second and third harmonics. The measurements indicate that the rectifier implemented has an RF-DC conversion efficiency of 81.9% at an input power of 29 dBm. Additionally, it achieves an efficiency of over 70% in the power range of 19 dBm to 33 dBm, with a size of 28mm°23 mm.
Authors
- Shudong Huo
- Ziyan Wang (ORCID: https://orcid.org/0000-0001-5463-7099)
- Yuxuan Cui
- Kui Dang (ORCID: https://orcid.org/0000-0002-9484-2035)
- Jiaying Weng (ORCID: https://orcid.org/0000-0002-9463-5714)
- Yue Hao (ORCID: https://orcid.org/0000-0001-7876-8878)
- Jincheng Zhang (ORCID: https://orcid.org/0009-0004-2607-9850)
Institutions
- Xidian University (CN)
Publication Details
- Published
- 2024-10-25
- DOI
- https://doi.org/10.1109/icicm63644.2024.10814547
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China
- Fundamental Research Funds for the Central Universities