Design of K-Band Low Noise Amplifier (LNA) Based on Active-Bias

This paper designs a two-stage cascade low noise amplifier (LNA) based on a FET (NE3517S03) and innovatively develops a common-base PNP microstrip stub structure as an active-bias circuit. The active-bias LNA's simulation results are compared with the passive-bias LNA's, which show that the designed active-bias LNA has 35.17 dB power gain, and 1.12 dB noise figure (NF) with better performance at 23.9GHz to 24.1 GHz. According, the LNA has lower noise and the largest gain when compared to published K-Band LNAs based on the FET. This proposed LNA is effective for K-band anti-collision radar in automobiles.