Evaluation and Analysis of LDO Circuit Boards Under EFT Interference Conditions

This paper tests and analyses the performance of low-dropout regulator (LDO) circuit boards under electrically fast transient (EFT) interference sources. The input and output states of the device under test are monitored by the direct power injection method to describe the operating state and performance changes of the board under different interference conditions and to analyze its response characteristics under different EFT interference intensities. Measurement results show that when EFT interference is applied to the Signal injection end, transient pulses of several tens of volts are generated at the monitoring end. As the interference intensity increases, the stability and efficiency of the LDO board do not show significant changes. It shows a strong anti-interference ability and stability performance. Finally, this paper further discusses the key factors and optimization directions in the design of LDO circuit boards, which provides a reliable reference for understanding and solving the internal failure mechanism of the chip and the performance of its components of LDO circuit boards under EFT interference.