High-Voltage Silicon PIN Radiation Detectors with Trenched Field Limiting Ring

In this paper, the trenched field limiting ring structure for PIN radiation detectors is proposed and studied. The impact of trench depth and width on the breakdown voltage is investigated through simulation. It is found that the breakdown voltage is 907.6V when the trench width is <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$25\mu \mathrm{m}$</tex>, which indicates that dead area effect can be effectively decreased by reducing the field limiting ring width without lowering the breakdown voltage.