A 37-40 GHz Low-Power Low Noise Amplifier in 65-nm RF CMOS

This paper presents a low noise amplifier (LNA) with a bandwidth of 37–40 GHz., referred to as n260 in the FR2-band for 5G communication., implemented using 65-nm CMOS technology. Instead of using traditional LC matching networks., transformers are used for impedance matching. The LNA adopts a two-stage cascade configuration., which uses a common-source (CS) structure for the first stage and a common-source common-gate (Cascode) structure for the second stage. By limiting the operating current of the transistors., the power consumption of the entire circuit is only 7.5 mW with 1.2-V supply voltage. The proposed LNA achieves a peak gain of 16 dB with gain flatness of less than 1 dB in the Ka-band. The post-simulated noise figure (NF) is 4.9-5.2 dB from 37.5 to 39.5 GHz.

Authors

Institutions

Publication Details

Published
2024-11-27
DOI
https://doi.org/10.1109/mape62875.2024.10813802
Citations
1
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.21
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A 37-40 GHz Low-Power Low Noise Amplifier in 65-nm RF CMOS

Houjun Sun, Wei Liu, Yong Huang, Junchen Liu
1 citations
Radio Frequency Integrated Circuit Design
0.21
article

A 37-40 GHz Low-Power Low Noise Amplifier in 65-nm RF CMOS

Houjun Sun, Wei Liu, Yong Huang, Junchen Liu
article en
1 citations

Abstract

This paper presents a low noise amplifier (LNA) with a bandwidth of 37–40 GHz., referred to as n260 in the FR2-band for 5G communication., implemented using 65-nm CMOS technology. Instead of using traditional LC matching networks., transformers are used for impedance matching. The LNA adopts a two-stage cascade configuration., which uses a common-source (CS) structure for the first stage and a common-source common-gate (Cascode) structure for the second stage. By limiting the operating current of the transistors., the power consumption of the entire circuit is only 7.5 mW with 1.2-V supply voltage. The proposed LNA achieves a peak gain of 16 dB with gain flatness of less than 1 dB in the Ka-band. The post-simulated noise figure (NF) is 4.9-5.2 dB from 37.5 to 39.5 GHz.

Beijing Institute of Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 44%
Radio Frequency Integrated Circuit Design
0.21
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.