A L Band High-Efficiency GaN Power Tube Based on the Large Signal Scaling Model

In this paper, a high-efficiency power tube operating in L-band is designed by the 0.35μm gate length and 28V GaN HEMT process die developed by Nanjing Electronic Devices Institute and the AlGaN/GaN scalable large signal model simulation guidance. The power tube is designed by a single GaN die with a total gate width of 14.4mm using a hybrid integrated internal matching scheme. The drain voltage is 28V and the frequency band is 1100~1400 MHz. The simulated result show that the saturated output power of the power tube is greater than 46 dBm and the power additional efficiency can reach up to 70% in the operating frequency band, which is highly consistent with the test data. The power tube has a very broad engineering application prospect.