Integrated Si<sub>3</sub>N<sub>4</sub> External Cavity Semiconductor Laser with Full C-Band Wavelength Calibration
We proposed a wavelength-calibrated narrow-linewidth high-power external cavity semiconductor laser, which can achieve 43 nm full C-band wavelength tuning, with a frequency deviation within ± 0.3 GHz and a maximum output power of 273.1 mW.
Authors
- Xiangyue Li (ORCID: https://orcid.org/0009-0003-0510-8061)
- Haoyang Pi
- Qing Ye (ORCID: https://orcid.org/0000-0002-1652-0049)
- Qingshuai Su (ORCID: https://orcid.org/0000-0003-1684-4171)
- Wei Fang (ORCID: https://orcid.org/0000-0003-0858-2001)
- Kangwen Yang (ORCID: https://orcid.org/0000-0001-7365-1793)
- Chen Chen (ORCID: https://orcid.org/0009-0004-7762-6519)
- Haiwen Cai (ORCID: https://orcid.org/0000-0002-7033-6349)
Institutions
- University of Shanghai for Science and Technology (CN)
- Shanghai Zhangjiang Laboratory (CN)
- Shanghai Institute of Optics and Fine Mechanics (CN)
Publication Details
- Published
- 2024-11-02
- DOI
- https://doi.org/10.1109/acp/ipoc63121.2024.10809822
- Citations
- 1
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21