A Low-Profile Resistive Ink Absorber for High Power Microwave Applications

A novel multilayer absorber structure using a 90degree rotational symmetric pattern is proposed. This microwave absorber is designed with an environmentally friendly resistive ink surface layer printed on dielectric board. Simulation results show that the frequency selective absorber (FSA) can achieve an absorption band of 3 - 9 GHz under normal incidence, with an electromagnetic energy absorption rate of over 90%. Under oblique incidence, the absorber maintains the same performance within the scanning range of ±50eover the whole C-band. The proposed structure employs separated dielectric boards with air spacing between them, leading to a highly practical and mature processing technique. The overall thickness is controlled to be 0.176 λ at the minimum operating frequency, making it a lowprofile design. The maximum field enhancement factor (MFEF) of the proposed structure is also calculated and displayed, which verify its application under high power microwave scenarios.