A High Power Supply Rejection NMOS LDO with Dual-Loop and Charge Pump
This paper presents a high power supply rejection (PSR) NMOS low dropout regulator (LDO) with dual-loop and charge pump. A dual-loop voltage follower that is capable of providing a high PSR through an inner fast loop and a NMOS as a power transistor. The charge pump raises the supply voltage to 1.5 times the supply voltage to power the error amplifier to ensure low dropout voltage. Post-simulation results indicate an output voltage of 896 mV with merely a 304 mV voltage dropout. The post-simulated PSR is −50 dB at 10kHz and the worst PSR of −18.7 dB at 1MHz over the full band. The undershoot/overshoot is 56 mV/12.8 mV. The total static power consumption is 756 μA.
Authors
- Haoshen Zhu (ORCID: https://orcid.org/0000-0001-7972-4789)
- Pei Qin (ORCID: https://orcid.org/0000-0002-1743-2200)
- Quan Xue (ORCID: https://orcid.org/0000-0002-4226-2127)
- Xiang Yi (ORCID: https://orcid.org/0000-0002-0330-737X)
- Bin Lin (ORCID: https://orcid.org/0000-0003-0931-1393)
Institutions
- South China University of Technology (CN)
Publication Details
- Published
- 2024-11-27
- DOI
- https://doi.org/10.1109/mape62875.2024.10813817
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Ministry of Education of the People's Republic of China
- Natural Science Foundation of Guangdong Province