A High Power Supply Rejection NMOS LDO with Dual-Loop and Charge Pump

This paper presents a high power supply rejection (PSR) NMOS low dropout regulator (LDO) with dual-loop and charge pump. A dual-loop voltage follower that is capable of providing a high PSR through an inner fast loop and a NMOS as a power transistor. The charge pump raises the supply voltage to 1.5 times the supply voltage to power the error amplifier to ensure low dropout voltage. Post-simulation results indicate an output voltage of 896 mV with merely a 304 mV voltage dropout. The post-simulated PSR is −50 dB at 10kHz and the worst PSR of −18.7 dB at 1MHz over the full band. The undershoot/overshoot is 56 mV/12.8 mV. The total static power consumption is 756 μA.

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Publication Details

Published
2024-11-27
DOI
https://doi.org/10.1109/mape62875.2024.10813817
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00

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article

A High Power Supply Rejection NMOS LDO with Dual-Loop and Charge Pump

Haoshen Zhu, Pei Qin, Quan Xue, Xiang Yi et al.
Semiconductor materials and devices
article

A High Power Supply Rejection NMOS LDO with Dual-Loop and Charge Pump

Haoshen Zhu, Pei Qin, Quan Xue, Xiang Yi, Bin Lin
article en

Abstract

This paper presents a high power supply rejection (PSR) NMOS low dropout regulator (LDO) with dual-loop and charge pump. A dual-loop voltage follower that is capable of providing a high PSR through an inner fast loop and a NMOS as a power transistor. The charge pump raises the supply voltage to 1.5 times the supply voltage to power the error amplifier to ensure low dropout voltage. Post-simulation results indicate an output voltage of 896 mV with merely a 304 mV voltage dropout. The post-simulated PSR is −50 dB at 10kHz and the worst PSR of −18.7 dB at 1MHz over the full band. The undershoot/overshoot is 56 mV/12.8 mV. The total static power consumption is 756 μA.

South China University of Technology (CN)
National Natural Science Foundation of China, Ministry of Education of the People's Republic of China, Natural Science Foundation of Guangdong Province
Affordable and clean energy
Openalex Percentile: Top 77%
Semiconductor materials and devices
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A High Power Supply Rejection NMOS LDO with Dual-Loop and Charge Pump — Haoshen Zhu, Pei Qin, et al. · (2024) | TGRS Research Map | TGRS