A light-emitting-diodes-integrated silicon carbide insulated gate bipolar transistor

Abstract A light-emitting-diode- (LED)-integrated silicon carbide (SiC) insulated gate bipolar transistor (LI-IGBT) is proposed in this paper. The novelty of LI-IGBT depends on the photogeneration effect of III-nitride LEDs embedded in the poly-Si regions of IGBT. The photogenerated carriers are then formed in the JFET region and the drift layer, indicating an increase in the conductivity in LI-IGBT as compared to the SiC IGBT with hole-barrier layer (H-IGBT) and the SiC IGBT with current spreading layer (CSL-IGBT). The static simulation results show that the electron density of the LI-IGBT at the middle of the drift layer is separately 17.44 times and 15.81 times higher than those of the H-IGBT and CSL-IGBT, yielding a 40.91% and 37.38% reduction of the forward voltage drop, respectively, and also, the LI-IGBT shows a 304.59% and 263.67% improvement in BFOM as compared to CSL-IGBT and H-IGBT, respectively. For the dynamic simulation in one cycle, the loss of LI-IGBT is separately reduced by 6.57% and 8.57% compared to H-IGBT and CSL-IGBT, respectively. Meanwhile, the relationship between V C(sat) and E turn-off can be optimized by adjusting collector doping and minority carrier lifetime. These results reveal that the proposed SiC IGBT is more suitable for ultra-high voltage applications.