Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe<sub>3</sub>GaTe<sub>2</sub>/hBN/Fe<sub>3</sub>GaTe<sub>2</sub>

Abstract We report the bias voltage-controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe 3 GaTe 2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states (DOS) at high energy levels. By adjusting the DOS weighting at different k-points to account for misalignment between the crystal structure of electrodes in experimental devices, we improved agreement between experimental and theoretical inversion voltages. Our results provide valuable insight into the voltage-controlled spin injection and detection in two-dimensional magnetic tunnel junctions, with implications for the development of energy-efficient spintronic devices.

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Publication Details

Journal
Journal of Physics D Applied Physics
Published
2024-12-31
DOI
https://doi.org/10.1088/1361-6463/ada44c
Citations
4
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.47

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article

Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2

Haodong Zhang, Jie Pan, Lihao Zhang, Yunxin Wang et al.
4 citations
Journal of Physics D Applied Physics
2D Materials and Applications
0.47
article

Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2

Haodong Zhang, Jie Pan, Lihao Zhang, Yunxin Wang, Yonglai Liu, Yingchun Cheng, Zhe Wang, Lei Zhang, Miao He, Zhe Qu, Keying Han
article en
4 citations

Abstract

Abstract We report the bias voltage-controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe 3 GaTe 2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs consistently at around 0.625 V across multiple devices and temperatures, highlighting the robustness of the effect. To understand this behavior, we developed a theoretical model incorporating spin-resolved density of states (DOS) at high energy levels. By adjusting the DOS weighting at different k-points to account for misalignment between the crystal structure of electrodes in experimental devices, we improved agreement between experimental and theoretical inversion voltages. Our results provide valuable insight into the voltage-controlled spin injection and detection in two-dimensional magnetic tunnel junctions, with implications for the development of energy-efficient spintronic devices.

Journal of Physics D Applied PhysicsVol. 58(10)
University of Science and Technology of China (CN), Chinese Academy of Sciences (CN), Hefei Institutes of Physical Science (CN), Yanshan University (CN), High Magnetic Field Laboratory (CN), Xi'an Jiaotong University (CN)
National Natural Science Foundation of China, State Key Laboratory for Manufacturing Systems Engineering, Natural Science Foundation of Anhui Province, Major Research Plan, Fundamental Research Funds for the Central Universities
Affordable and clean energy
Openalex Percentile: Top 37%
2D Materials and Applications
0.47
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