GOS dual-metal split-gate step channel dielectrically modulated DG-TFET biosensor: A label-free non-ideal case study and analysis

Abstract This article performs an extensive analysis of the ideal and non-ideal case of hybridization of biomolecules in the nano-gap cavity present in a biosensor device. A gate-on-source (GOS) dual metal, split-gate, step channel dielectrically modulated (DM) double gate TFET-based label-free biosensor is proposed in this paper. The commercial TCAD simulation software (Silvaco TCAD) is used to simulate the proposed device. The paper focusses on both the performance improvement of the TFET device used to implement the biosensor and the sensitivity of the biosensor device. This proposed label-free bio-sensing device exhibits a high drain current sensitivity ∼ 10 8 (for dielectric constant k in the range of 15) irrespective of the presence/absence of charge on the biomolecules. A high I ON /I OFF ratio of the range ∼ 10 8 is obtained for the proposed device. A low sub-threshold swing (less than 60 mV dec −1 ) is seen to be given by the proposed device. There are several non-ideal cases investigated in this work to allow the comprehension of the viability of this biosensor in practical applications. The non-ideal cases with fill factors ranging from 30% to 80% are analysed alongwith steric hindrance effects n the device sensitivity. The integration of electrical FET device with the biological sensing module to develop a biosensor is successfully achieved in this work to allow the attainment of a feasible solution for everyday needs.