IGBT Model for Circuit Simulations: Implementation of the Nonlinear Voltage-and Current-Dependent Capacitance Method to Silicon IGBTs

This paper presents a simple to produce and calibrate yet accurate behavioural model for circuit applications, capable of replicating the characteristics of Silicon (Si) IGBTs. Originally developed and demonstrated for Silicon Carbide (SiC) IGBTs, the behavioural model utilises voltage-and current-dependent capacitances, something unique to this model, and a dependent current source to emulate the switching waveforms, as well as a voltage-dependent current source for the static characteristics. The nonlinear capacitances are extracted from dynamic Current-Voltage (IV) measurements. Calibration and comparison data were produced using Technology Computer-Aided Design (TCAD) device electrical performance simulations on a 650V Si Trench Gate (TG) Field Stop (FS) IGBT numerical device created through process simulations. The model was demonstrated in Matlab-Simulink and shown to successfully replicate the characteristics of a Si TGFS IGBT in circuit simulations, marking a crucial step in assessing the universal applicability of this model to all bipolar/bi-MOS devices in Si and SiC.