Silicon-Nitride Temperature Sensor with Enhanced Sensitivity Based on Mach-Zehnder Interferometer
We demonstrate broadband Silicon-Nitride asymmetric Mach-Zehnder interferometer temperature sensor showing near 40 pm/K sensitivity from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$25^{\mathrm{o}}\mathrm{C}$</tex> to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$85^{\mathrm{o}}\mathrm{C}$</tex> in S+C+L band, which is two times larger than conventional Silicon-Nitride temperature sensors. The proposed sensor only needs single lithography for the sensing unit, without introducing negative thermo-optic coefficient (TOC) materials. In addition, Optical properties of the sensor are accurately extracted from the optical measurement method.
Authors
- Zihao Tang (ORCID: https://orcid.org/0009-0001-8003-0618)
- Shuang Zheng (ORCID: https://orcid.org/0000-0002-4825-5163)
- Minming Zhang (ORCID: https://orcid.org/0000-0002-3742-1445)
- Deming Liu (ORCID: https://orcid.org/0000-0001-5591-2929)
Institutions
- Huazhong University of Science and Technology (CN)
Publication Details
- Published
- 2024-08-16
- DOI
- https://doi.org/10.1109/icait62580.2024.10808074
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China