A 1.9 ‐ 2.7 GHz High Efficiency and Broadband GaN HEMT PA
A high efficiency and broadband GaN Power Amplifier (PA) is designed based on the techniques of harmonic control and step matching. Simulation results show that within the frequency band of 1.9 ‐ 2.7 GHz its output power (Pout) is about 40-42 dBm, Gain is 12-14 dB, the maximum drain efficiency (DE) is up to 73.5% with power-added efficiency (PAE) of 71%. Compared with other similar PAs, obvious high efficiency and broadband are presented.
Authors
- Hai-Feng Wu
- Dan Zhao (ORCID: https://orcid.org/0000-0003-2877-3104)
- Qian Lin (ORCID: https://orcid.org/0000-0002-7466-7313)
Institutions
- Qinghai University (CN)
Publication Details
- Published
- 2024-11-04
- DOI
- https://doi.org/10.1109/csrswtc64338.2024.10811608
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00