An Improved Electro-Thermal Model for GaN Gate Injection Transistor

In this paper, an electro-thermal model of Gallium Nitride (GaN) Gate Injection Transistor (GIT) is proposed. To extract model parameters, curve tracer measurement data is used by considering self-heating during the characterization. Junction temperature is obtained with simulation thanks to measurements. The proposed model not only shows good accuracy to predict GIT output characteristics at low V DS voltage region as a Curtice Cubic model, but also produces reasonable results at high VDS voltage region where the Curtice Cubic models fails to work. By considering device self-heating, the model parameters can be extracted using few datasets of measurement, which reduces characterization and modelling effort.