Design of a Low Phase Noise LC-VCO in 22nm Process Technology

This paper presents a design method of LC-VCO with Class-B structure using 22 nm FD-SOI process. The VCO mainly uses second harmonic filtering technology to reduce phase noise. The supply voltage is 0.8V and the power consumption is 12.3mW. The simulation results show that when the frequency tuning range is 18.9 GHz to 21.3 GHz, the phase noise at 1MHz offset is −108.56 dBc/Hz. At this frequency, the VCO has good noise performance.

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Publication Details

Published
2024-11-04
DOI
https://doi.org/10.1109/csrswtc64338.2024.10811658
Primary Topic
Semiconductor materials and devices
Type
article
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article

Design of a Low Phase Noise LC-VCO in 22nm Process Technology

Wenlong He, Yunxiao Zhu, Zhaohui Wu, Feng Liu et al.
Semiconductor materials and devices
article

Design of a Low Phase Noise LC-VCO in 22nm Process Technology

Wenlong He, Yunxiao Zhu, Zhaohui Wu, Feng Liu, Ziqi Ke, Mingze Li
article en

Abstract

This paper presents a design method of LC-VCO with Class-B structure using 22 nm FD-SOI process. The VCO mainly uses second harmonic filtering technology to reduce phase noise. The supply voltage is 0.8V and the power consumption is 12.3mW. The simulation results show that when the frequency tuning range is 18.9 GHz to 21.3 GHz, the phase noise at 1MHz offset is −108.56 dBc/Hz. At this frequency, the VCO has good noise performance.

Shenzhen University (CN), Institute of Microelectronics (CN)
Affordable and clean energy
Openalex Percentile: Top 77%
Semiconductor materials and devices
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