Temperature Coefficients for Impact Ionization in Silicon Derived From Temperature Coefficients of Avalanche Voltage
Recently, a method to extract temperature coefficients of impact ionization (II) from the linear and quadratic temperature coefficients of avalanche voltage was successfully applied for 4H-SiC devices. We apply the same method here to Silicon by first providing new data for linear and quadratic temperature coefficients of avalanche voltages and using the method to derive new temperature coefficients for four different models of II coefficients.
Authors
- Sei‐Hyung Ryu (ORCID: https://orcid.org/0000-0002-3607-1199)
- Daniel J. Lichtenwalner (ORCID: https://orcid.org/0000-0002-6324-6118)
- Suman Das (ORCID: https://orcid.org/0000-0003-1714-6287)
- Shane Stein (ORCID: https://orcid.org/0009-0001-1763-5403)
- Philipp Steinmann (ORCID: https://orcid.org/0000-0001-8446-0706)
- Jae Hyung Park (ORCID: https://orcid.org/0000-0002-5043-9455)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-12-30
- DOI
- https://doi.org/10.1109/ted.2024.3512477
- Citations
- 1
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.21