Worst Case Analysis of Random Parameter Circuits or Devices via Taylor Models Method

This paper combines the approximation capabilities of the Taylor model with the optimization performance of the Bernstein polynomials to analyze and predict the frequency-domain response of stochastic circuits affected by uncertain parameters. This method provides a more rigorous bound for circuit responses compared the formerly developed affine arithmetic, helping to improve the accuracy of worst-case predictions and uncertainty quantification.

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Publication Details

Published
2024-11-04
DOI
https://doi.org/10.1109/csrswtc64338.2024.10811631
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
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article

Worst Case Analysis of Random Parameter Circuits or Devices via Taylor Models Method

Tongyu Ding, Ying Huang, Chong-Zhi Han, Huaibin Wang
Advancements in Semiconductor Devices and Circuit Design
article

Worst Case Analysis of Random Parameter Circuits or Devices via Taylor Models Method

Tongyu Ding, Ying Huang, Chong-Zhi Han, Huaibin Wang
article en

Abstract

This paper combines the approximation capabilities of the Taylor model with the optimization performance of the Bernstein polynomials to analyze and predict the frequency-domain response of stochastic circuits affected by uncertain parameters. This method provides a more rigorous bound for circuit responses compared the formerly developed affine arithmetic, helping to improve the accuracy of worst-case predictions and uncertainty quantification.

Jimei University (CN)
Openalex Percentile: Top 77%
Advancements in Semiconductor Devices and Circuit Design
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