Improving the ZrO<sub>2</sub>/re-grown AlGaN interfaces by insulator Post Deposition Anealing for MIS-HEMTs Applications
We studied the effect of post deposition annealing (PDA) of ZrO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> gate insulator on the performance of gallium nitride-based metal-insulator-semiconductor (MIS) structures employing ZrO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/re-grown AlGaN interfaces. Compared with the control MIS-capacitor that have not undergone PDA, the PDA-processed MIS-capacitor exhibited more positive threshold voltage and highly pronounced spill-over, suggesting better quality of ZrO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/re-grown AlGaN interfaces. Corresponding PDA-processed MIS-high-electron-mobility transistors exhibited improved subthreshold swing and hysteretic behavior of the transfer curves over those of control transistor devices, corroborating the results obtained from MIS-capacitors.
Authors
- Ryuichi Kato (ORCID: https://orcid.org/0000-0003-2087-2896)
- Takahiro Igarashi
- Joel T. Asubar (ORCID: https://orcid.org/0000-0002-1829-4129)
- Masaaki Kuzuhara (ORCID: https://orcid.org/0000-0001-5171-5565)
- Akio Yamamoto (ORCID: https://orcid.org/0000-0002-7409-3938)
- Kosuke Sekiyama
- Shiro TERAI
Institutions
- University of Fukui (JP)
- Kwansei Gakuin University (JP)
Publication Details
- Published
- 2024-11-21
- DOI
- https://doi.org/10.1109/imfedk64776.2024.10814153
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00