Optimization of ReRAM using Mist-CVD GTO films: Importance of substrate thickness, aging, and preparation procedure for improving switching ratio

In this study, the mist CVD method was used to form GTO (Ga-Sn-O) films in ReRAM fabrication, and different device fabrication conditions were compared. The highest switching ratio of 16.8 was obtained under the most optimal production conditions. We also found that in order to obtain this ideal switching ratio, it is necessary to consider three factors: (1) the optimal thickness of substrate: Since device performance depends on the thickness of the substrate, and if the substrate is too thick, the response time may be slower and energy loss may increase, proper selection of substrate thickness should be considered.(2) the period between device creation and evaluation: Changes over time should also be considered, as the time from device creation to evaluation is dependent on performance, and degradation due to oxidation and chemical reactions may progress. (3) the GTO solution preparation procedure: the performance of GTO devices depends on the solution preparation procedure. Standardization of the preparation procedure should be considered because accurate adherence to the preparation procedure and uniform quality of the solution are important and can ensure stable device performance.