Forming free resistive switching with battery-like characteristics in Ag/ZnFe<sub>2</sub>O<sub>4</sub>/ITO ReRAM device
An unusual resistive switching (RS) behavior has been achieved in ZnFe<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> (ZFO) using Ag (Silver)/ZFO/ITO (Indium Tin Oxide) Resistive Random Access Memory (ReRAM) device. The device exhibits unusual resistive characteristics, showing butterfly-like curves linked to non-faradaic-type capacitance. Changing the external voltage polarity leads to the creation and disruption of conducting filaments (CF) containing oxygen vacancies, potentially causing the resistive switching behavior observed in the fabricated ReRAM device. The resultant device is well-suited for next generation memory application.
Authors
- Ph. Nonglen Meitei (ORCID: https://orcid.org/0000-0002-9720-2156)
- Adiba Adiba
- Tufail Ahmad (ORCID: https://orcid.org/0000-0001-6353-6134)
Institutions
- Indian Institute of Technology Guwahati (IN)
- Aligarh Muslim University (IN)
Publication Details
- Published
- 2024-11-21
- DOI
- https://doi.org/10.1109/imfedk64776.2024.10814557
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00