High Output Microgenerator Using Mghfain Film

This talk presents the piezoelectric thin film manufactured by a magnetron sputtering system. In the system Mg and Hf are co-doped into the Al site of AIN, the apparatus including: a target made of AlN; a plurality of first pieces made of Mg arranged on a surface of the target; and a plurality of second pieces made of Hf arranged on the surface of the target In the piezoelectric thin film manufacturing apparatus and the piezoelectric thin film manufacturing method, it is possible to easily control the doping ratio of Mg and Hf by controlling the ratio of the average surface area. In particular, by controlling the average surface area of each of the first pieces to be 0.9 to 1.1 times the average surface area of each of the second pieces, a piezoelectric thin film of $(\text{MgHf})_{\text{x}} \text{Al}_{1-\text{x}} \text{N}$ deposited on stainless steel foil substrate having an excellent $F o M$ ($F o M:=e_{31}^{2} / \epsilon_{0} \epsilon_{r}$) and piezoelectric strain constant can be obtained. Finally, we manufactured a micro-generator with the maximum output-power of 36 mW.