Interconnect Reliability Analysis of MCM Based on Different Application Environments

With rapid development of integrated circuits, the integrated density is steadily increasing, which resulted in continuous reduction of interconnect sizes and increased complexity of interconnect structures. Meanwhile, electromigration (EM) is considered as the major challenge to interconnect reliability. In this paper, the interconnect reliability for a multi-chip module (MCM) under different environments is predicted based on finite element analysis (FEA). Then, ANSYS parametric design language (APDL) is used to complete the modeling and calculation of MCM. As a result, the atomic flux divergence (AFD) is obtained by controlling temperature, voltage, and line width. Therefore, this is the important guidance for the layout design of MCM.