X-Ray Radiation Responses of 4H-SiC MOS with Eu2O3/SiO2 Dual Dielectric

This study examines the effects of X-ray irradiation on the structural and electrical properties of Eu₂O₃ dielectric thin films deposited on SiC substrates. The films were exposed to varying radiation durations, and their structural changes were analyzed using X-ray diffraction (XRD), while electrical properties were evaluated through capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements. The results revealed that increased radiation exposure led to an increase in crystalline size and lattice strain, attributed to local heating and atomic rearrangements caused by radiation. Electrical analysis showed slight shifts in flat band and mid-gap voltages due to radiation-induced defects, which influenced charge trapping behavior. Despite the observed defects, the dielectric material exhibited stable electrical performance under the tested radiation conditions, indicating its potential for radiation-tolerant electronic devices. These findings highlight the applicability of Eu₂O₃ as a high-k dielectric material for advanced electronic devices operating in radiation-harsh environments.