A Novel Insight into Bulk Trap Generation at Cryogenic Temperatures

We investigated the degradation mechanism of bulk defect generation at cryogenic temperatures. The reaction of bulk defects is accompanied by hydrogen diffusion. We proposed a degradation mechanism due to bulk defect generation based on the temperature dependence of the hydrogen diffusion from 77K to 300K. It was found that bulk trap generation occurs closer to MOS interfaces and electron detraps are suppressed at cryogenic temperatures.