Investigation Of Structure And Bandgap Dependence Of Ingaas Solar Cell Design For Thermophotovoltaic Applications

In this work, we will investigate the optimal performances of indium gallium arsenide ($\mathrm{In}_{1-\mathrm{x}} \mathrm{Ga}_{\mathrm{x}} \mathrm{As}$) cells for thermophotovoltaic (TPV) applications by tuning its bandgap and cell structures. The composition of x, which is the dominant factor to determine the cell’s bandgap were chosen with the values of $x=0.1311,0.196,0.2566,0.3138$, and 0.47 that correspond to cell bandgaps ranging from $0.45-0.74 \mathrm{eV}$. The solar cell was further simulated by varying its critical design parameters including but not limited to emitter/base thickness, doping concentration, anti-reflective coatings with blackbody illumination using SCAPS-1D software. The simulation results were further verified by the experimental data from literature to ensure the validity of important parameters to guide further optimization [1–3].