Optimizing Neutral-Axis Alignment for Improved Stability and Synaptic Performance in Flexible Transistors

Flexible organic synaptic transistors (FOSTs) are crucial for neuromorphic computing due to their flexibility and biocompatibility, yet their mechanical stability under strain is underexplored. This study enhances FOST resilience by optimizing the neutral-axis alignment through layer thickness adjustments and incorporation of a polyimide layer, aligning the axis closer to the heterojunction interface. This strategy significantly reduces strain-induced defects, minimizing excitatory postsynaptic current (EPSC) degradation from 21.19% to 13.34% after 100 bending cycles. Optimized FOSTs demonstrate a remarkable pattern recognition accuracy of 90.4% after bending, significantly outperforming the 76.8% achieved by standard devices. These findings present a straightforward and effective approach to improve the mechanical stability and synaptic performance of FOSTs, advancing the development of durable bio-inspired computing systems.