Characterization and Understanding of Cosmic Ray-Induced Soft Errors in SRAMs
This paper reviews soft errors in SRAM at ground level, focusing on neutron-induced soft error rates (SER) and muon-induced single event upsets (SEUs) across different SRAM technologies. The study explores SER characterization methods for terrestrial environments using accelerator facilities, presenting new findings on muon-induced SEUs in 12-nm FinFET, 28-nm, and 65-nm planar SRAMs.
Authors
- Masanori Hashimoto (ORCID: https://orcid.org/0000-0002-3819-4504)
Institutions
- Kyoto University (JP)
Publication Details
- Published
- 2024-11-21
- DOI
- https://doi.org/10.1109/imfedk64776.2024.10814208
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Japan Society for the Promotion of Science