Electrical Characterization of Non-volatile Mott Transition in Mist CVD Deposited NiO Thin Films for CeRAM Applications

This study demonstrates Correlated Electron RAM (CeRAM) using carbon-doped NiO thin films deposited by mist CVD. Pt/NiO/Pt devices with 10 and 16 μmΦ capacitor sizes were fabricated. XRD and AFM analyses revealed nanocrystalline or amorphous films with smooth surfaces. Current-voltage measurements confirmed successful RESET and SET operations, demonstrating CeRAM functionality. The observed large resistance ratio indicates optimized carbon doping, suggesting potential for improved memory device performance.