Innovative Power Electronics for All Users - Progress in Ultra-Wide Bandgap α-Ga₂O₃

Corundum-structured gallium oxide (α-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) is attracting much attention as a power device material that can “achieve loss reduction exceeding that of SiC at a cost comparable to Si” and expand innovative power electronics to the mass market. This paper introduces the progress in the development of α-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> power devices.