Thickness Dependence of Ferroelectricity for Thin (Al<sub>0.9</sub>Sc<sub>0.1</sub>)N-based FeRAM
The thickness dependences of the crystallinity and ferroelectricity for (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.9</inf>Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</inf>)N films were investigated. The (001) out-of-plane orientation and ferroelectricity of (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.9</inf>Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</inf>)N film depend on the thickness of (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.9</inf>Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</inf>)N film and Pt bottom electrode. 30-nm-thick (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.9</inf>Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</inf>)N films deposited on 5-nm-thick Pt bottom electrodes maintain the (001) orientation and saturated high remanent polarization (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</inf>) (> 100 μC/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>). We succeeded in reducing the total thickness of the Pt bottom electrode and (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.9</inf>Sc<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.1</inf>)N film to 35 nm.
Authors
- Toshikazu Irisawa (ORCID: https://orcid.org/0009-0006-6192-6239)
- Hiroshi Funakubo (ORCID: https://orcid.org/0000-0002-1106-200X)
- K. Okamoto (ORCID: https://orcid.org/0000-0001-7952-8729)
- Yoshiko Nakamura
- Soshun Doko (ORCID: https://orcid.org/0009-0009-8560-4412)
- Nana Sun (ORCID: https://orcid.org/0009-0002-8729-0532)
- K. Tsunekawa (ORCID: https://orcid.org/0009-0005-2516-6079)
- Naoko Matsui (ORCID: https://orcid.org/0009-0004-3075-0598)
Institutions
- Tokyo Institute of Technology (JP)
- Canon Anelva (Japan) (JP)
Publication Details
- Published
- 2024-11-21
- DOI
- https://doi.org/10.1109/imfedk64776.2024.10814248
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00