Molecular engineering enables high-performance hybrid perovskite photodetector

Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics. However, various defects are generated by the solution-based film quality inevitably produces during the crystallization process, which leads to non-radiative recombination and interface mismatch. In this work, polyvinylpyrrolidone (PVP) molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector. Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI 3 surface, which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules. The interfacial passivation for the undercoordinated Pb 2+ defects was also verified via first-principles calculations. The electron injection barrier can be regulated via interfacial molecule engineering, leading to the result that the dark current is suppressed by five orders of magnitude to 1.57 × 10 −11 A, and the specific detectivity improved by about three orders of magnitude reaching 2.9 × 10 12 Jones. These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors. The polyvinylpyrrolidone (PVP) molecular layer is implemented as the interfacially multifunctional layer-self-assembled passivation layer and selective transport layer to fabricate an effective photodetector. Based on molecular engineering strategy, the electron injection barrier can be regulated via interfacial molecule engineering, resulting in five orders of magnitude dark current restraining to be 1.57 × 10 −11 A and approximately three orders of magnitude improved specific detectivity reaching 2.9 × 10 12 Jones.

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Publication Details

Journal
Chip
Published
2024-12-30
DOI
https://doi.org/10.1016/j.chip.2024.100125
Citations
8
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
1.67
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article

Molecular engineering enables high-performance hybrid perovskite photodetector

Peiyao Liu, Wanbiao Hu, Xing Zhang, Yong Wang et al.
8 citations
Chip
Perovskite Materials and Applications
1.67
article

Molecular engineering enables high-performance hybrid perovskite photodetector

Peiyao Liu, Wanbiao Hu, Xing Zhang, Yong Wang, Feng Qiu, Bolei Zhang
article en
8 citations

Abstract

Highly optical-absorption hybrid perovskites with upgraded stability and superior photoelectronic properties are essential for optoelectronics. However, various defects are generated by the solution-based film quality inevitably produces during the crystallization process, which leads to non-radiative recombination and interface mismatch. In this work, polyvinylpyrrolidone (PVP) molecule layer was implemented as the interfacially multifunctional layer and selective transport layer to fabricate an effective photodetector. Interfacial PVP is conductive to the bond coordination between the PVP molecule and the MAPbI 3 surface, which could lower the work function of the perovskite film and effectively improve its surface morphology so as to isolate it from water and oxygen molecules. The interfacial passivation for the undercoordinated Pb 2+ defects was also verified via first-principles calculations. The electron injection barrier can be regulated via interfacial molecule engineering, leading to the result that the dark current is suppressed by five orders of magnitude to 1.57 × 10 −11 A, and the specific detectivity improved by about three orders of magnitude reaching 2.9 × 10 12 Jones. These results provide a feasible route to fabricate highly sensitive and stable hybrid perovskite photodetectors. The polyvinylpyrrolidone (PVP) molecular layer is implemented as the interfacially multifunctional layer-self-assembled passivation layer and selective transport layer to fabricate an effective photodetector. Based on molecular engineering strategy, the electron injection barrier can be regulated via interfacial molecule engineering, resulting in five orders of magnitude dark current restraining to be 1.57 × 10 −11 A and approximately three orders of magnitude improved specific detectivity reaching 2.9 × 10 12 Jones.

ChipVol. 4(1)
Yunnan University (CN)
Openalex Percentile: Top 15%
Perovskite Materials and Applications
1.67
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