Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices

Authors

Y. Cordier (ORCID: https://orcid.org/0000-0003-3720-9409)
Dominique Planson (ORCID: https://orcid.org/0000-0002-1617-8757)
Hala El Rammouz (ORCID: https://orcid.org/0000-0002-7664-334X)
Camille Sonneville (ORCID: https://orcid.org/0000-0001-8094-5618)
Julien Buckley (ORCID: https://orcid.org/0000-0003-0082-9903)
G. Brémond (ORCID: https://orcid.org/0000-0002-0679-7175)
V Maurya
M Dagher
Florian Bartoli (ORCID: https://orcid.org/0000-0002-4643-0968)
Éric Frayssinet (ORCID: https://orcid.org/0000-0003-3900-8440)
J M Bluet
Matthew Charles (ORCID: https://orcid.org/0000-0003-0668-8865)
N. Rochat

Institutions

Institut polytechnique de Grenoble (FR)
Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
Institut des Nanotechnologies de Lyon (FR)
CEA Grenoble (FR)
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (FR)
Laboratoire Ampère (FR)
Laboratoire d'Électronique des Technologies de l'Information (FR)
Institut National des Sciences Appliquées de Lyon (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2024-09-16
Primary Topic: GaN-based semiconductor devices and materials
Type: article
Field-Weighted Citation Impact: 0.00

Funders

Agence Nationale de la Recherche
Electronic Components and Systems for European Leadership

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article

Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices

Y. Cordier, Dominique Planson, Hala El Rammouz, Camille Sonneville et al.

Sep 16, 2024

SPIRE - Sciences Po Institutional REpository

GaN-based semiconductor devices and materials

article

Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices

Y. Cordier, Dominique Planson, Hala El Rammouz, Camille Sonneville, Julien Buckley, G. Brémond, V Maurya, M Dagher, Florian Bartoli, Éric Frayssinet, J M Bluet, Matthew Charles, N. Rochat

September 16, 2024article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Institut polytechnique de Grenoble (FR), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), Institut des Nanotechnologies de Lyon (FR), CEA Grenoble (FR), Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (FR), Laboratoire Ampère (FR), Laboratoire d'Électronique des Technologies de l'Information (FR), Institut National des Sciences Appliquées de Lyon (FR)

Agence Nationale de la Recherche, Electronic Components and Systems for European Leadership

Openalex Percentile: Top 85%

GaN-based semiconductor devices and materials

Open Access PDF OpenAlex

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Impact of Substrate Quality on Vertical GaN-on-GaN Schottky and PiN Devices — Y. Cordier, Dominique Planson, et al. · SPIRE - Sciences Po Institutional REpository (2024) | TGRS Research Map | TGRS