52-GHz Surface Acoustic Wave Resonators in Thin-Film Lithium Niobate on Silicon Carbide

This article reports a surface acoustic wave (SAW) resonator at 52 GHz with a high quality factor (Q) of 188 and a high phase velocity of 12.2 km/s, marking the first millimeter-wave (mmWave) SAW devices with high Q. Transferred 300-nm 128Y lithium niobate (LN) thin film on 4H silicon carbide (SiC) substrate is used for the acoustic platform. The dramatic frequency scaling is enabled by the high phase velocity thickness-shear mode, confined in the LN-SiC stack, due to the high stiffness and acoustic velocity of SiC. The high phase velocity of 12.2 km/s is approaching the longitudinal wave velocity of 12.5 km/s in 4H SiC. The resonator achieves electromechanical coupling ( ${k}^{{2}}$ ) of 0.5%, 3-dB series resonance Q ( ${Q}_{s}$ ) of 12, 3-dB shunt resonance Q ( ${Q}_{p}$ ) of 188, and maximum Bode Q of 154. Upon further development, the mmWave solidly mounted acoustic platform could enable various applications in signal processing, optomechanical, and quantum applications.

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Publication Details

Journal
IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control
Published
2024-12-30
DOI
https://doi.org/10.1109/tuffc.2024.3522042
Citations
6
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
Field-Weighted Citation Impact
1.11

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article

52-GHz Surface Acoustic Wave Resonators in Thin-Film Lithium Niobate on Silicon Carbide

Tzu-Hsuan Hsu, Joshua Campbell, Lezli Matto, Mark S. Goorsky et al.
6 citations
IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control
Acoustic Wave Resonator Technologies
1.11
article

52-GHz Surface Acoustic Wave Resonators in Thin-Film Lithium Niobate on Silicon Carbide

Tzu-Hsuan Hsu, Joshua Campbell, Lezli Matto, Mark S. Goorsky, Mihir Chaudhari, Ian Anderson, Naveed Ahmed, Ruochen Lu, Edmond Chow, Jack Kramer, Ming‐Huang Li, Vakhtang Chulukhadze, Ziran Du
article en
6 citations

Abstract

This article reports a surface acoustic wave (SAW) resonator at 52 GHz with a high quality factor (Q) of 188 and a high phase velocity of 12.2 km/s, marking the first millimeter-wave (mmWave) SAW devices with high Q. Transferred 300-nm 128Y lithium niobate (LN) thin film on 4H silicon carbide (SiC) substrate is used for the acoustic platform. The dramatic frequency scaling is enabled by the high phase velocity thickness-shear mode, confined in the LN-SiC stack, due to the high stiffness and acoustic velocity of SiC. The high phase velocity of 12.2 km/s is approaching the longitudinal wave velocity of 12.5 km/s in 4H SiC. The resonator achieves electromechanical coupling ( ${k}^{{2}}$ ) of 0.5%, 3-dB series resonance Q ( ${Q}_{s}$ ) of 12, 3-dB shunt resonance Q ( ${Q}_{p}$ ) of 188, and maximum Bode Q of 154. Upon further development, the mmWave solidly mounted acoustic platform could enable various applications in signal processing, optomechanical, and quantum applications.

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency ControlVol. 72(2)
University of Illinois Urbana-Champaign (US), University of California, Los Angeles (US), National Tsing Hua University (TW), Samueli Institute (US), The University of Texas at Austin (US)
Defense Advanced Research Projects Agency
Affordable and clean energy
Openalex Percentile: Top 24%
Acoustic Wave Resonator Technologies
1.11
DOISourceOpenAlex
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