Orientation-selective spin-polarized edge states in monolayer NiI2

Spin-polarized edge states in two-dimensional materials hold promise for spintronics and quantum computing applications. Constructing stable edge states by tailoring two-dimensional semiconductor materials with bulk-boundary correspondence is a feasible approach. Recently layered NiI<sub>2</sub> is suggested as a two-dimensional type-II multiferroic semiconductor with intrinsic spiral spin ordering and chirality-induced electric polarization. However, the one-dimensional spin-polarized edge states of multiferroic materials down to monolayer limit has not yet been studied. We report here that monolayer NiI<sub>2</sub> was successfully synthesized on Au(111) by molecular beam epitaxy. Spin-polarized scanning tunneling microscopy/spectroscopy experiments visualize orientation-selective spin-polarized edge states in monolayer NiI<sub>2</sub> islands. By performing first-principles calculations, we further confirm that spin-polarized edge states are selectively aligning along the Ni-terminated edges rather than the I-terminated edges. Our result will provide the opportunity to tune edge states by selected orientation and to develop spintronic devices in two-dimensional magnetic semiconductors.

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Publication Details

Journal
Nature Communications
Published
2024-12-30
DOI
https://doi.org/10.1038/s41467-024-55372-x
Citations
10
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
3.38

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article

Orientation-selective spin-polarized edge states in monolayer NiI2

Xinlei Zhao, Huiru Liu, Peng Cheng, Baojie Feng et al.
10 citations
Nature Communications
Topological Materials and Phenomena
3.38
article

Orientation-selective spin-polarized edge states in monolayer NiI2

Xinlei Zhao, Huiru Liu, Peng Cheng, Baojie Feng, Fengjie Ma, Kehui Wu, Yi‐Qi Zhang, Jia‐Tao Sun, Jin Zhao, Lan Chen, Yao Li, Yu Wang
article en
10 citations

Abstract

Spin-polarized edge states in two-dimensional materials hold promise for spintronics and quantum computing applications. Constructing stable edge states by tailoring two-dimensional semiconductor materials with bulk-boundary correspondence is a feasible approach. Recently layered NiI<sub>2</sub> is suggested as a two-dimensional type-II multiferroic semiconductor with intrinsic spiral spin ordering and chirality-induced electric polarization. However, the one-dimensional spin-polarized edge states of multiferroic materials down to monolayer limit has not yet been studied. We report here that monolayer NiI<sub>2</sub> was successfully synthesized on Au(111) by molecular beam epitaxy. Spin-polarized scanning tunneling microscopy/spectroscopy experiments visualize orientation-selective spin-polarized edge states in monolayer NiI<sub>2</sub> islands. By performing first-principles calculations, we further confirm that spin-polarized edge states are selectively aligning along the Ni-terminated edges rather than the I-terminated edges. Our result will provide the opportunity to tune edge states by selected orientation and to develop spintronic devices in two-dimensional magnetic semiconductors.

Nature CommunicationsVol. 15(1)
Beijing Institute of Technology (CN), University of Science and Technology of China (CN), Beijing Normal University (CN), Songshan Lake Materials Laboratory (CN), Institute of Physics (CN), University of Chinese Academy of Sciences (CN), Ministry of Industry and Information Technology (CN), Tsinghua University (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, Ministry of Science and Technology of the People's Republic of China, China Postdoctoral Science Foundation
Openalex Percentile: Top 7%
Topological Materials and Phenomena
3.38
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