Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2
Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS<sub>2</sub>. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8 V, a high conductance ratio of above 10<sup>6</sup>, a long retention time of >10 years, and a programming endurance greater than 10<sup>4</sup> cycles. Remarkably, flexible SFeMs are achieved with state-of-the-art performances competitive to their rigid counterparts and maintain their performances post bending over 10<sup>3</sup> cycles. Furthermore, synapse-specific Hebbian forms of plasticity and image recognition with a high accuracy of 97.81% are demonstrated based on flexible SFeMs.
Authors
- Jianshi Tang (ORCID: https://orcid.org/0000-0001-8369-0067)
- Kaihui Liu (ORCID: https://orcid.org/0000-0002-8781-2495)
- Xiuzhen Li (ORCID: https://orcid.org/0009-0001-1799-7762)
- Wei Yang (ORCID: https://orcid.org/0000-0002-3925-0352)
- Biao Qin (ORCID: https://orcid.org/0009-0003-6744-8096)
- Luojun Du (ORCID: https://orcid.org/0000-0002-2420-8258)
- Yalin Peng
- Xuedong Bai (ORCID: https://orcid.org/0000-0002-1403-491X)
- Rong Yang (ORCID: https://orcid.org/0000-0001-5936-6849)
- Zitao Chen (ORCID: https://orcid.org/0000-0002-6111-7750)
- Na Li (ORCID: https://orcid.org/0000-0001-9739-8964)
- Guangyu Zhang (ORCID: https://orcid.org/0000-0002-1242-4391)
- Can Liu (ORCID: https://orcid.org/0000-0001-5451-4144)
- Sheng Meng (ORCID: https://orcid.org/0000-0002-1553-1432)
- Yaxian Wang (ORCID: https://orcid.org/0000-0003-4790-2880)
- Jundong Zhu (ORCID: https://orcid.org/0000-0002-0104-2507)
- Yue Xi (ORCID: https://orcid.org/0000-0003-2789-7674)
- Dongxia Shi
- Zhiheng Huang (ORCID: https://orcid.org/0000-0002-1519-2661)
- Zitian Pan
- Mengze Zhao
- C Cui (ORCID: https://orcid.org/0009-0007-4688-1009)
Institutions
- Hunan University (CN)
- Chinese Academy of Sciences (CN)
- Peking University (CN)
- Songshan Lake Materials Laboratory (CN)
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ)
- Institute of Physics (CN)
- National Laboratory for Superconductivity (CN)
- University of Chinese Academy of Sciences (CN)
- Renmin University of China (CN)
- Tsinghua University (CN)
Publication Details
- Journal
- Nature Communications
- Published
- 2024-12-30
- DOI
- https://doi.org/10.1038/s41467-024-55333-4
- Citations
- 55
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 11.48
Funders
- National Science Foundation
- National Natural Science Foundation of China
- National Natural Science Foundation of China-Yunnan Joint Fund
- National Key Research and Development Program of China