Medium-scale flexible integrated circuits based on 2D semiconductors

Two-dimensional (2D) semiconductors, combining remarkable electrical properties and mechanical flexibility, offer fascinating opportunities for flexible integrated circuits (ICs). Despite notable progress, so far the showcased 2D flexible ICs have been constrained to basic logic gates and ring oscillators with a maximum integration scale of a few thin film transistors (TFTs), creating a significant disparity in terms of circuit scale and functionality. Here, we demonstrate medium-scale flexible ICs integrating both combinational and sequential elements based on 2D molybdenum disulfide (MoS<sub>2</sub>). By co-optimization of the fabrication processes, flexible MoS<sub>2</sub> TFTs with high device yield and homogeneity are implemented, as well as flexible NMOS inverters with robust rail-to-rail operation. Further, typical IC modules, such as NAND, XOR, half-adder and latch, are created on flexible substrates. Finally, a medium-scale flexible clock division module consisting of 112 MoS<sub>2</sub> TFTs is demonstrated based on an edge-triggered Flip-Flop circuit. Our work scales up 2D flexible ICs to medium-scale, showing promising developments for various applications, including internet of everything, health monitoring and implantable electronics.

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Publication Details

Journal
Nature Communications
Published
2024-12-30
DOI
https://doi.org/10.1038/s41467-024-55142-9
Citations
25
Primary Topic
Advanced Sensor and Energy Harvesting Materials
Type
article
Field-Weighted Citation Impact
4.61

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article

Medium-scale flexible integrated circuits based on 2D semiconductors

Yanbang Chu, Xiuzhen Li, Wei Yang, Yangkun Zhang et al.
25 citations
Nature Communications
Advanced Sensor and Energy Harvesting Materials
4.61
article

Medium-scale flexible integrated circuits based on 2D semiconductors

Yanbang Chu, Xiuzhen Li, Wei Yang, Yangkun Zhang, Na Li, Jian Tang, Luojun Du, Yalin Peng, Zhiheng Huang, Jinpeng Tian, Yuchen Wang, Lu Li, Guangyu Zhang, Qinqin Wang, Biying Huang, Dongxia Shi, Chenyang Cui
article en
25 citations

Abstract

Two-dimensional (2D) semiconductors, combining remarkable electrical properties and mechanical flexibility, offer fascinating opportunities for flexible integrated circuits (ICs). Despite notable progress, so far the showcased 2D flexible ICs have been constrained to basic logic gates and ring oscillators with a maximum integration scale of a few thin film transistors (TFTs), creating a significant disparity in terms of circuit scale and functionality. Here, we demonstrate medium-scale flexible ICs integrating both combinational and sequential elements based on 2D molybdenum disulfide (MoS<sub>2</sub>). By co-optimization of the fabrication processes, flexible MoS<sub>2</sub> TFTs with high device yield and homogeneity are implemented, as well as flexible NMOS inverters with robust rail-to-rail operation. Further, typical IC modules, such as NAND, XOR, half-adder and latch, are created on flexible substrates. Finally, a medium-scale flexible clock division module consisting of 112 MoS<sub>2</sub> TFTs is demonstrated based on an edge-triggered Flip-Flop circuit. Our work scales up 2D flexible ICs to medium-scale, showing promising developments for various applications, including internet of everything, health monitoring and implantable electronics.

Nature CommunicationsVol. 15(1)
Chinese Academy of Sciences (CN), Songshan Lake Materials Laboratory (CN), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Institute of Physics (CN), National Laboratory for Superconductivity (CN), University of Chinese Academy of Sciences (CN)
National Science Foundation, National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 4%
Advanced Sensor and Energy Harvesting Materials
4.61
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