Cryogenic III-V and Nb electronics integrated on silicon for large-scale quantum computing platforms

Quantum computers now encounter the significant challenge of scalability, similar to the issue that classical computing faced previously. Recent results in high-fidelity spin qubits manufactured with a Si CMOS technology, along with demonstrations that cryogenic CMOS-based control/readout electronics can be integrated into the same chip or die, opens up an opportunity to break out the challenges of qubit size, I/O, and integrability. However, the power consumption of cryogenic CMOS-based control/readout electronics cannot support thousands or millions of qubits. Here, we show that III-V two-dimensional electron gas and Nb superconductor-based cryogenic electronics can be integrated with Si and operate at extremely low power levels, enabling the control and readout for millions of qubits. Our devices offer a unity gain cutoff frequency of 601 GHz, a unity power gain cutoff frequency of 593 GHz, and a low noise indication factor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mfenced> <mml:mrow> <mml:msqrt> <mml:mrow> <mml:msub><mml:mrow><mml:mi>I</mml:mi></mml:mrow> <mml:mrow><mml:mi>D</mml:mi></mml:mrow> </mml:msub> </mml:mrow> </mml:msqrt> <mml:mspace></mml:mspace> <mml:msubsup><mml:mrow><mml:mi>g</mml:mi></mml:mrow> <mml:mrow><mml:mi>m</mml:mi></mml:mrow> <mml:mrow><mml:mo>-</mml:mo> <mml:mn>1</mml:mn></mml:mrow> </mml:msubsup> </mml:mrow> </mml:mfenced> </mml:math> of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>0.21</mml:mn> <mml:msqrt><mml:mrow><mml:mi>Vmm</mml:mi></mml:mrow> </mml:msqrt> <mml:msqrt> <mml:mrow> <mml:msup><mml:mrow><mml:mi>S</mml:mi></mml:mrow> <mml:mrow><mml:mo>-</mml:mo> <mml:mn>1</mml:mn></mml:mrow> </mml:msup> </mml:mrow> </mml:msqrt> </mml:math> at 4 K using more than 10 times less power consumption than CMOS.