Grain engineering for efficient near-infrared perovskite light-emitting diodes

Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr<sup>-1</sup> m<sup>-2</sup>. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.

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Publication Details

Journal
Nature Communications
Published
2024-12-30
DOI
https://doi.org/10.1038/s41467-024-55075-3
Citations
31
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
6.47

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article

Grain engineering for efficient near-infrared perovskite light-emitting diodes

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31 citations
Nature Communications
Perovskite Materials and Applications
6.47
article

Grain engineering for efficient near-infrared perovskite light-emitting diodes

Jee Yung Park, L. Jay Guo, Sung‐Doo Baek, Jiajun Qin, William B. Gunnarsson, Wei‐Jie Feng, Aidan H. Coffey, Seok Joo Yang, Harindi R. Atapattu, M. Bilal Faheem, Yuanhao Tang, Hanjun Yang, Chenhui Zhu, James C. Loy, Barry P. Rand, Qiquan Qiao, Kenneth R. Graham, Letian Dou, Wenhao Shao, Poojan Indrajeet Kaswekar, Yoon Ho Lee, Kang Wang, Yuchen Zhang, Feng wei Gao, Yu-Ting Yang
article en
31 citations

Abstract

Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conjugated cation reduces defect densities and accelerates radiative recombination. The resulting near-infrared perovskite light-emitting diodes achieve a peak external quantum efficiency of 31.4% and demonstrate a maximum brightness of 929 W sr<sup>-1</sup> m<sup>-2</sup>. These findings indicate that perovskite light-emitting diodes have potential as cost-effective, high-performance near-infrared light sources for practical applications.

Nature CommunicationsVol. 15(1)
Linköping University (SE), University of Kentucky (US), Lawrence Berkeley National Laboratory (US), Chinese Academy of Sciences (CN), Princeton University (US), Purdue University West Lafayette (US), University of Michigan (US), Yale University (US), Institute of Chemistry (CN), Syracuse University (US)
National Science Foundation, U.S. Department of Energy, Purdue University, National Research Foundation, National Research Foundation of Korea, Office of Science, Office of Energy Efficiency and Renewable Energy, Division of Materials Research, Division of Electrical, Communications and Cyber Systems, Basic Energy Sciences, Office of Energy Efficiency
Openalex Percentile: Top 3%
Perovskite Materials and Applications
6.47
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