Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature

The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular magnetic anisotropy, remains a significant challenge. In this work, we report wafer-scale growth of vdW ferromagnet Fe<sub>3</sub>GaTe<sub>2</sub> using molecular beam epitaxy. The epitaxial Fe<sub>3</sub>GaTe<sub>2</sub> films exhibit robust ferromagnetism, exemplified by high Curie temperature (T<sub>C</sub> = 420 K) and large perpendicular magnetic anisotropy (PMA) constant K<sub>U</sub> = 6.7 × 10<sup>5 </sup>J/m<sup>3</sup> at 300 K for nine-unit-cell film. Notably, the ferromagnetic order is preserved even in the one-unit-cell film with T<sub>C</sub> reaching 345 K, benefiting from the strong PMA (K<sub>U</sub> = 1.8×10<sup>5 </sup>J/m<sup>3</sup> at 300 K). In comparison to exfoliated Fe<sub>3</sub>GaTe<sub>2</sub> flakes, our epitaxial films with the same thickness show the significant enhancement of T<sub>C</sub>, which could be ascribed to the tensile strain effect from the substrate. The successful realization of wafer-scale ferromagnetic Fe<sub>3</sub>GaTe<sub>2</sub> films with T<sub>C</sub> far above room temperature represents a substantial advancement (in some aspects or some fields, e.g. material science), paving the way for the development of 2D magnet-based spintronic devices.

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Publication Details

Journal
Nature Communications
Published
2024-12-30
DOI
https://doi.org/10.1038/s41467-024-54936-1
Citations
32
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
3.75

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article

Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature

Xinman Chen, Lizhu Ren, Quan‐Lin Ye, I. K. Sou et al.
32 citations
Nature Communications
2D Materials and Applications
3.75
article

Robust ferromagnetism in wafer-scale Fe3GaTe2 above room-temperature

Xinman Chen, Lizhu Ren, Quan‐Lin Ye, I. K. Sou, Meng Meng, Guozhong Xing, Bing Shen, Shuxiang Wu, Jiandong Guo, Di Wang, Yijun Chen, Wenbin Li, Zhihao He, Shuwei Li, Mingyi Chen, Bo Deng, J.-G. Li, Xinhao Guo, Minghui Gu
article en
32 citations

Abstract

The discovery of ferromagnetism in van der Waals (vdW) materials has enriched the understanding of two-dimensional (2D) magnetic orders and opened new avenues for fundamental physics research and next generation spintronics. However, achieving ferromagnetic order at room temperature, along with strong perpendicular magnetic anisotropy, remains a significant challenge. In this work, we report wafer-scale growth of vdW ferromagnet Fe<sub>3</sub>GaTe<sub>2</sub> using molecular beam epitaxy. The epitaxial Fe<sub>3</sub>GaTe<sub>2</sub> films exhibit robust ferromagnetism, exemplified by high Curie temperature (T<sub>C</sub> = 420 K) and large perpendicular magnetic anisotropy (PMA) constant K<sub>U</sub> = 6.7 × 10<sup>5 </sup>J/m<sup>3</sup> at 300 K for nine-unit-cell film. Notably, the ferromagnetic order is preserved even in the one-unit-cell film with T<sub>C</sub> reaching 345 K, benefiting from the strong PMA (K<sub>U</sub> = 1.8×10<sup>5 </sup>J/m<sup>3</sup> at 300 K). In comparison to exfoliated Fe<sub>3</sub>GaTe<sub>2</sub> flakes, our epitaxial films with the same thickness show the significant enhancement of T<sub>C</sub>, which could be ascribed to the tensile strain effect from the substrate. The successful realization of wafer-scale ferromagnetic Fe<sub>3</sub>GaTe<sub>2</sub> films with T<sub>C</sub> far above room temperature represents a substantial advancement (in some aspects or some fields, e.g. material science), paving the way for the development of 2D magnet-based spintronic devices.

Nature CommunicationsVol. 15(1)
Sun Yat-sen University (CN), Hangzhou Normal University (CN), National University of Singapore (SG), South China Normal University (CN), Chinese Academy of Sciences (CN), Hong Kong University of Science and Technology (HK), Institute of Microelectronics (SG), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Institute of Physics (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Science and Technology Planning Project of Guangdong Province, Youth Innovation Promotion Association, Basic and Applied Basic Research Foundation of Guangdong Province
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Openalex Percentile: Top 3%
2D Materials and Applications
3.75
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