High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant

As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young's modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS<sub>2</sub> field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.

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Publication Details

Journal
Nature Communications
Published
2024-12-30
DOI
https://doi.org/10.1038/s41467-024-53935-6
Citations
20
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
2.34

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High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant

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High-performance 2D electronic devices enabled by strong and tough two-dimensional polymer with ultra-low dielectric constant

Y. P. Wang, Guanhui Gao, Yuji Zhao, Chen-yang Lin, Jun Lou, Yifan Zhu, Xiaoyin Tian, Rui Xu, Yimo Han, Haolei Zhou, Zhong Yu, Hanyu Zhu, Qing Ai, Yanjie Shao, Xiang Zhang, Shisong Luo, Gustavo A. Alvarez, Zhiting Tian, Kongyang Yi, Honghu Zhang, Qiyi Fang, Boyu Zhang, Zheng Liu, Yifeng Liu, Tianshu Zhai
article en
20 citations

Abstract

As the feature size of microelectronic circuits is scaling down to nanometer order, the increasing interconnect crosstalk, resistance-capacitance (RC) delay and power consumption can limit the chip performance and reliability. To address these challenges, new low-k dielectric (k < 2) materials need to be developed to replace current silicon dioxide (k = 3.9) or SiCOH, etc. However, existing low-k dielectric materials, such as organosilicate glass or polymeric dielectrics, suffer from poor thermal and mechanical properties. Two-dimensional polymers (2DPs) are considered promising low-k dielectric materials because of their good thermal and mechanical properties, high porosity and designability. Here, we report a chemical-vapor-deposition (CVD) method for growing fluoride rich 2DP-F films on arbitrary substrates. We show that the grown 2DP-F thin films exhibit ultra-low dielectric constant (in plane k = 1.85 and out-of-plane k = 1.82) and remarkable mechanical properties (Young's modulus > 15 GPa). We also demonstrated the improved performance of monolayer MoS<sub>2</sub> field-effect-transistors when utilizing 2DP-F thin films as dielectric substrates.

Nature CommunicationsVol. 15(1)
Nanyang Technological University (SG), Brookhaven National Laboratory (US), Cornell University (US), Massachusetts Institute of Technology (US), Rice University (US)
National Science Foundation, U.S. Department of Energy, Semiconductor Research Corporation, Rice University, National Research Foundation, Ministry of Education, India, Defense Advanced Research Projects Agency, Office of Science, Office of Naval Research, Division of Civil, Mechanical and Manufacturing Innovation, Basic Energy Sciences, Brookhaven National Laboratory, Air Force Research Laboratory
Affordable and clean energy
Openalex Percentile: Top 7%
Graphene research and applications
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