Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO3 nanomembranes at sub-ambient temperatures
Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly, we report incipient ferroelectricity in freestanding SrTiO<sub>3</sub> nanomembranes integrated with monolayer MoS<sub>2</sub> to create multifunctional devices, demonstrating stable ferroelectric order at low temperatures for cryogenic memory devices. Our observation includes ultra-fast polarization switching (~10 ns), low switching voltage (<6 V), over 10 years of nonvolatile retention, 100,000 endurance cycles, and 32 conductance states (5-bit memory) in SrTiO<sub>3</sub>-gated MoS<sub>2</sub> transistors at 15 K and up to 100 K. Additionally, we exploit room-temperature weak polarization switching, a feature of incipient ferroelectricity, to construct a physical reservoir for pattern recognition. Our results showcase the potential of utilizing perovskite material properties enabled by advancements in freestanding film growth and heterogeneous integration, for diverse functional applications. Notably, the low 180 °C thermal budget for fabricating the 3D-SrTiO<sub>3</sub>/2D-MoS<sub>2</sub> device stack enables the integration of diverse materials into silicon complementary metal-oxide-semiconductor technology, addressing challenges in compute-in-memory and neuromorphic applications.
Authors
- Sankalpa Hazra (ORCID: https://orcid.org/0000-0002-9126-8058)
- Jay Shah
- Saptarshi Das (ORCID: https://orcid.org/0000-0002-0188-945X)
- Sooho Choo
- Venkatraman Gopalan (ORCID: https://orcid.org/0000-0001-6866-3677)
- Joan Marie Redwing (ORCID: https://orcid.org/0000-0002-7906-452X)
- Shivasheesh Varshney (ORCID: https://orcid.org/0000-0001-9496-0456)
- Akash Saha (ORCID: https://orcid.org/0009-0008-2008-3612)
- Shiva Subbulakshmi Radhakrishnan (ORCID: https://orcid.org/0000-0003-1136-7425)
- Bharat Jalan (ORCID: https://orcid.org/0000-0002-7940-0490)
- Dipanjan Sen (ORCID: https://orcid.org/0000-0002-5781-4027)
- K. Andre Mkhoyan (ORCID: https://orcid.org/0000-0003-3568-5452)
- Pranavram Venkatram
- Yang Yang (ORCID: https://orcid.org/0000-0002-0025-5914)
- Zhiyu Zhang (ORCID: https://orcid.org/0009-0001-8537-417X)
- Harikrishnan Ravichandran (ORCID: https://orcid.org/0009-0002-2230-370X)
- M.B. Das (ORCID: https://orcid.org/0009-0000-4209-8817)
- Yongwen Sun (ORCID: https://orcid.org/0009-0007-9427-035X)
- Chen Chen (ORCID: https://orcid.org/0000-0001-9027-7107)
Institutions
- University of Minnesota (US)
- Pennsylvania State University (US)
Publication Details
- Journal
- Nature Communications
- Published
- 2024-12-30
- DOI
- https://doi.org/10.1038/s41467-024-54231-z
- Citations
- 32
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 6.68
Funders
- National Science Foundation
- U.S. Department of Energy
- University of Pennsylvania
- University of Minnesota
- Pennsylvania State University
- National Research Foundation
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea
- Office of Science
- Materials Research Science and Engineering Center, Harvard University
- Division of Materials Research
- Division of Electrical, Communications and Cyber Systems
- Basic Energy Sciences
- Air Force Office of Scientific Research
- Army Research Office